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Micron ships its 232-layer 3D NAND flash with extra storage, higher efficiency and a smaller bundle measurement: Digital Images Evaluation

Micron has introduced its next-generation 232-layer NAND forward of subsequent week’s Flash Reminiscence Summit in California. The 232-layer NAND contains the trade’s quickest NAND I/O pace of two.4 GB/s and is the world’s densest NAND. The flash reminiscence triple layer cell (TLC) density is 14.6 Gb/mm2, which is between 35% and 100% better than the density of competing TLC merchandise.

Micron’s new NAND contains the very best layer depend, most bits per sq. millimeter and quickest I/O pace. It builds upon Micron’s prior 176-layer NAND and the brand new 232-layer NAND is well-suited for a spread of purposes, together with shopper merchandise, cellular units and extra. The gadget guarantees 100% increased write bandwidth, better than 75% increased learn bandwidth, and a 50% improve in switch charge to 2.4 GB/s (ONFI bus). This efficiency is delivered in a 28% smaller bundle. As a result of the 232-layer NAND is 28% smaller than its predecessor, it is well-suited to skinny and light-weight laptop computer designs. Likewise, space-constrained and power-conscious cellular units can use the brand new NAND. The brand new 232-layer 3D NAND is transport on chosen Essential-branded SSDs already, with further merchandise primarily based on the know-how transport later this yr.

Micron writes, ‘This primary-to-market 232-layer know-how represents Micron’s sixth era of NAND going into high-volume manufacturing. The breakthrough excessive layer depend, together with CuA (CMOS beneath array) know-how, permits us to ship big storage capability as much as 1 terabit per chip on a really small footprint. Consequently, the bit density per space on the 232-layer NAND gadget is over 45% increased than that for the earlier 176-layer era, an incredible improve in functionality! The rise in density additionally allows improved kind issue packages, similar to the brand new 11.5mm x 13.5mm bundle, which is 28% smaller than the packages for previous-generation chips. All because of this extra kinds of units can now be geared up with massive capability, high-performance storage.’

The 232L NAND includes a pair of 116-layer decks. It is the primary time Micron has ever produced a single deck over 100 layers. With the better variety of decks and better density, the 232L NAND is Micron’s first 1Tbit TLC die. This implies Micron can produce 2TB chip packages by stacking 16 of its 232L dies.

Constructing the brand new 3D NAND flash is not as simple as merely including extra layers. Micron writes, ‘These units might be difficult to manufacture, requiring many a whole lot of particular person processes to take a uncooked wafer by to accomplished dies, or chips.’ Probably the most difficult a part of the method is stacking layers increased whereas sustaining uniformity.

‘Micron’s 232-layer NAND is a watershed second for storage innovation as first proof of the potential to scale 3D NAND to greater than 200 layers in manufacturing,’ mentioned Scott DeBoer, govt vice chairman of know-how and merchandise at Micron. ‘This groundbreaking know-how required intensive innovation, together with superior course of capabilities to create excessive side ratio constructions, novel supplies developments and modern design enhancements that construct on our market-leading 176-layer NAND know-how.’

For extra info, go to Micron.

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